elektronische bauelemente SSG4542C n-ch: 8.3 a, 40 v, r ds(on) 14 m ?? p-ch: -7.6 a, -40 v, r ds(on) 28 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 1 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space ? fast switching speed ? high performance trench technology package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25c unless otherwise specified) parameter symbol n-ch p-ch unit drain-source voltage v ds 40 -40 v gate-source voltage v gs 20 -20 v i d @ t a = 25c 8.3 -7.6 a continuous drain current 1 i d @ t a = 70c 6.8 -6.3 a pulsed drain current 2 i dm 50 50 a continuous source current (diode conduction) 1 i s 2.3 -2.1 a p d @ t a = 25c 2.1 2.1 w total power dissipation 1 p d @ t a = 70c 1.3 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 c / w maximum junction-to-ambient 1 steady state r ja 110 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 5.8 6.20 h 0.35 0.51 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.50 0.93 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. sop-8
elektronische bauelemente SSG4542C n-ch: 8.3 a, 40 v, r ds(on) 14 m ?? p-ch: -7.6 a, -40 v, r ds(on) 28 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 2 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol ch min. typ. max. unit teat conditions static n 1 1.5 3 v ds = v gs , i d = 250 a gate threshold voltage v gs(th) p -1 -1.4 -3 v v ds = v gs , i d = -250 a n - 6 100 v ds = 0v, v gs = 20v gate-body leakage current i gss p - 7 100 na v ds = 0v, v gs = -20v n - 2na 1 v ds = 32v, v gs = 0v zero gate voltage drain current i dss p - 12na -1 a v ds = -32v, v gs = 0v n 25 - - v ds = 5v, v gs = 10v on-state drain current 1 i d(on) p -50 - - a v ds = -5v, v gs = -10v - 14 22 v gs = 10v, i d = 8.3a n - 17 27 v gs = 4.5v, i d = 7.3a - 28 30 v gs = -10v, i d = -7.6a drain-source on-resistance 1 r ds(on) p - 35 40 m ? v gs = -4.5v, i d = -6.2a n - 40 - v ds = 15v, i d = 8.3a forward transconductance 1 g fs p - 31 - s v ds = -15v, i d = -7.6a dynamic 2 n - 13 30 total gate charge q g p - 14 30 n - 3.3 7 gate-source charge q gs p - 5.8 12 n - 4.5 10 gate-drain charge q gd p - 12 30 nc n-channel i d = 8.3a, v ds = 15v, v gs = 4.5v p-channel i d = -7.6a, v ds = -15v, v gs = -4.5v n - 1317 3000 input capacitance c iss p - 1583 4000 n - 272 600 output capacitance c oss p - 278 600 n - 169 400 reverse transfer capacitance c rss p - 183 400 pf n-channel f= 1mhz, v ds = 15v, v gs = 0v p-channel f= 1mhz, v ds = -15v, v gs = 0v n - 20 40 turn-on delay time t d(on) p - 15 30 n - 9 20 rise time t r p - 16 40 n - 70 200 turn-off delay time t d(off) p - 62 200 n - 20 40 fall time t f p - 46 100 ns n-channel v dd = 15v, v gs = 10v i d = 1a, r gen = 25 ? p-channel v dd = -15v, v gs = -10v i d = -1a, r gen = 15 ? notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente SSG4542C n-ch: 8.3 a, 40 v, r ds(on) 14 m ?? p-ch: -7.6 a, -40 v, r ds(on) 28 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 3 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (n-channel)
elektronische bauelemente SSG4542C n-ch: 8.3 a, 40 v, r ds(on) 14 m ?? p-ch: -7.6 a, -40 v, r ds(on) 28 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 4 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSG4542C n-ch: 8.3 a, 40 v, r ds(on) 14 m ?? p-ch: -7.6 a, -40 v, r ds(on) 28 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 5 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (p-channel)
elektronische bauelemente SSG4542C n-ch: 8.3 a, 40 v, r ds(on) 14 m ?? p-ch: -7.6 a, -40 v, r ds(on) 28 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 6 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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